@▷ MOSFET (Metal Oxyde Semiconductor Field Effect Transistor) Basics | Diagram for Schematic

MOSFET (Metal Oxyde Semiconductor Field Effect Transistor) Basics

The theory behind Field Effect Transistor has been known since 1920~1930, which is 20 years before the Bipolar Junction Transistor was invented. At that time, J.E. Lilienfeld of USA suggested a transistor model having two metal contacts on each side with a metallic plate (aluminum) on top of the semiconductor. The electric field at the semiconductor surface, formed by the voltage supplied at the metallic plate, enables the control of the current flow between the metal contacts. This was the initial conception of the Field Effect Transistor. But due to lack of appropriate semiconductor materials and the immature technology, the development was very slow. William Shockely introduced JFETs (Junction Field Effect Transistors) in 1952. Dacey and Ross improved on it in 1953. In JFETs, Lilienfeld’s metallic field is replaced by a pn junction, the metal contacts are called source and drain, and the field effect electrode is called gate. Research in small-signal MOSFETs continued, without any significant improvements in power MOSFET design. New products were introduced in the 1970s. In March 1986 FSC formed TFT with 9 people, and began research on power MOSFETs. And currently, Fairchild produces QFET series using planar technology and low voltage power trench products using trench technology.–Article quote

MOSFET Basics Circuit Diagram

Another content discussed inside the application note including the history of power MOSFETs, FETs, the structure, the characteristics, user’s manual (characteristics of capacitance, gate charge, drain – source On Resistance, threshold voltage, transconductance, breakdown voltage temperature coefficient, drain-to-source leakage current, gate-to-source voltage, gate-source leakage forward/reverse, switching characteristics, single-pulsed avalanche energy, repetitive avalanche rating, drain to source dv/dt ratings, thermal characteristics, continuous drain current, total power dissipation, linear derating factor, safe operating areas).

Source :  K.S.Oh (Faichild Semiconductor)

Find more details about the Basic MOSFET from the Fairchild Semiconductor by downloading the pdf document from the following source:

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